- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 53/00 - Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Patent holdings for IPC class H10B 53/00
Total number of patents in this class: 38
10-year publication summary
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0
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0
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0
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0
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0
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0
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4
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12
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11
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7
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| 2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Micron Technology, Inc. | 24960 |
6 |
| Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
6 |
| Samsung Electronics Co., Ltd. | 131630 |
5 |
| Huawei Technologies Co., Ltd. | 100781 |
3 |
| Kepler Computing Inc. | 221 |
3 |
| International Business Machines Corporation | 60644 |
1 |
| Intel Corporation | 45621 |
1 |
| Semiconductor Energy Laboratory Co., Ltd. | 10902 |
1 |
| Applied Materials, Inc. | 16587 |
1 |
| Tokyo Electron Limited | 11599 |
1 |
| Georgia Tech Research Corporation | 2453 |
1 |
| Korea Advanced Institute of Science and Technology | 3906 |
1 |
| Fudan University | 585 |
1 |
| National University of Singapore | 2228 |
1 |
| Peking University | 1111 |
1 |
| IBM China Company Limited | 1050 |
1 |
| Ferroelectric Memory GmbH | 64 |
1 |
| Changxin Memory Technologies, Inc. | 4732 |
1 |
| Beijing Superstring Academy of Memory Technology | 164 |
1 |
| Wuxi Smart Memories Technologies Co., Ltd. | 14 |
1 |
| Other owners | 0 |